NTHL020N120SC1 Overview
Silicon Carbide (SiC) MOSFET EliteSiC, 20 mohm, 1200 V, M1, TO-247-3L NTHL020N120SC1.
NTHL020N120SC1 Key Features
- Typ. RDS(on) = 20 mW
- Ultra Low Gate Charge (QG(tot) = 203 nC)
- Capacitance (Coss = 260 pF)
- 100% UIL Tested
- This Device is Halide Free and RoHS pliant with exemption 7a