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NTL4502N Datasheet

Quad Power MOSFET

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NTL4502N
Quad Power MOSFET
24 V, 15 A, N−Channel, PInPAKt Package
Features
Four N−Channel MOSFETs in a Single Package
High Drain Current (Up to 80A per Device, Single Pulse tp < 10 µs,
RqJC = 1.5 °C/W)
High Input Impedance for Ease of Drive
Ultra Low On−resistance (RDS(on)) Provides Low Conduction Losses
Very Fast Switching Times Provides Low Switching Losses
Low Parasitic Inductance
Low Stored Charge for Efficient Switching
Very Low VSD Ideal for Synchronous Rectification
200% Footprint Reduction Compared to Similar DPAK Solution for
the Same Power
Advanced Leadless Power Integrated Package (PInPAK)
Applications
DC−DC Converters
Motherboard/Server Voltage Regulator
Telecomm/Industrial Power Supply
H−Bridge Circuits
Low Voltage Motor Control
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t10 s
Steady
State
TA=25°C
TA=85°C
TA=25°C
TA=25°C
VDSS
VGS
ID
PD
24
±20
15
10.9
18.8
2.9
V
V
A
W
t10 s
4.5
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA=25°C
TA=85°C
TA=25°C
ID
PD
11.4 A
8.2
1.7 W
Pulsed Drain Current tp=10 µs
Operating Junction and Storage
Temperature
IDM 32
TJ, TSTG −55 to 150
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy – (VDD= 25 V, VG=10 V, IPK=60 A,
L=0.1 mH, RG= 1.0 kW)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS
EAS
TL
15 A
80 mJ
260 °C
http://onsemi.com
V(BR)DSS
24 V
RDS(ON) TYP
8.0 m@ 4.5 V
11.2 m@ 10 V
ID MAX
(Note 1)
15 A
ÇÇÇ1ÇÇÇ1ÇÇ6
CASE 495
PInPAK
STYLE 1
xx
A
Y
WW
MARKING
DIAGRAM
16
1
NTL4502N
AYWW
= Specific Device Code
= Assembly Location
= Year
= Work Week
S1 D1 G1 S2 D2 G2
1 23 4 56
ÇÇÇÇÇÇÇÇÇÇÇÇÇD1 16
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇD4 15
7 D2
8 D3
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ14 13 12 11 10 9
S4 D4 G4 S3 D3 G3
(Bottom View)
Pinout Diagram
ORDERING INFORMATION
Device
Package
NTL4502NT1
PInPAK
Shipping
1500 / Reel
© Semiconductor Components Industries, LLC, 2003
August, 2003 − Rev. 2
1
Publication Order Number:
NTL4502N/D


  ON Semiconductor Electronic Components Datasheet  

NTL4502N Datasheet

Quad Power MOSFET

No Preview Available !

NTL4502N
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction−to−Case (Drain)
RqJC
Junction−to−Ambient – Steady State (Note 1)
RqJA
Junction−to−Ambient – t10 s (Note 1)
RqJA
Junction−to−Ambient – Steady State (Note 2)
RqJA
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using minimum recommended pad size (Cu area = 0.440 in sq).
1 (S1) 2 (D1) 3 (G1) 4 (S2) 5 (D2) 6 (G2)
Max Units
1.5 °C/W
43
27.5
75
(D1) 16
(D4) 15
7 (D2)
8 (D3)
14 (S4)
13 (D4) 12 (G4) 11 (S3) 10 (D3) 9 (G3)
SCHEMATIC (TOP VIEW)
http://onsemi.com
2


Part Number NTL4502N
Description Quad Power MOSFET
Maker ON Semiconductor
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