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NTLJD3182FZ
Power MOSFET and Schottky Diode
−20 V, −4.0 A, Single P−Channel & Schottky Barrier Diode, ESD
Features
• WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
Thermal Conduction
• Lowest RDS(on) Solution in 2x2 mm Package • Footprint Same as SC−88 Package • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments • ESD Protected • High Current Schottky Diode: 2 A Current Rating • This is a Pb−Free Device
Applications
• Optimized for Battery and Load Management Applications in
Portable Equipment
• Li−Ion Battery Charging and Protection Circuits • DC−DC Buck Circuit
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±8.
NTLJD3182FZ Datasheet
