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  ON Semiconductor Electronic Components Datasheet  

NTMC1300R2 Datasheet

Power MOSFET

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NTMC1300R2
Power MOSFET
3 Amps, 30 Volts
Complementary SO8 Dual
Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Miniature SO8 Surface Mount Package
Applications
DCDC Converters
Power Management in Portable and Battery Powered Products, i.e.:
Computers, Printers, Cellular and Cordless Phones
Low Voltage Motor Controls in Mass Storage Products, i.e.: Disk
Drives, Tape Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current Continuous (Note 1)
NChannel
PChannel
VDSS
VGS
ID
30 V
±20 V
Adc
2.2
1.8
Drain Current Continuous (Note 2)
NChannel
PChannel
ID Adc
2.8
2.3
Drain Current Continuous (Note 3)
NChannel
PChannel
ID
Adc
3.6
3.0
Drain Current Pulsed
NChannel
PChannel
IDM Apk
8.5
7.0
Total Power Dissipation @ TA = 25°C
(Note 3)
PD 2.0 W
Operating and Storage
Temperature Range
TJ, Tstg
65 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 10 Vdc,
IL = 2.45 Apk, L = 25 mH, RG = 25 W)
Thermal Resistance
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
JunctiontoAmbient (Note 3)
EAS
RqJA
75 mJ
178.5
106
62.5
°C/W
Maximum Lead Temperature for
Soldering Purposes for 10 Seconds
TL 260 °C
1. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2), Steady State.
2. When surface mounted to an FR4 board using 1pad size, (Cu Area
0.412 in2), Steady State.
3. When surface mounted to an FR4 board using 1pad size, (Cu Area
0.412 in2), T 10 Seconds.
http://onsemi.com
3 AMPERES, 30 VOLTS
73 mW @ VGS = 10 V (Typ)
(NChannel)
100 mW @ VGS = 10 V (Typ)
(PChannel)
NChannel
D1
PChannel
D2
G1 G2
S1 S2
MARKING
DIAGRAM
8
SO8, Dual
CASE 751
STYLE 11
EC1300
LYWW
1
EC1300
L
Y
WW
= Device Code
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
Source1
Gate1
Source2
Gate2
18
27
36
45
(Top View)
Drain1
Drain1
Drain2
Drain2
ORDERING INFORMATION
Device
Package
Shipping
NTMC1300R2
SO8 2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
Publication Order Number:
NTMC1300R2/D


  ON Semiconductor Electronic Components Datasheet  

NTMC1300R2 Datasheet

Power MOSFET

No Preview Available !

NTMC1300R2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Polarity
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 μA)
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 30 Vdc, TJ = 25°C)
GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Notes 4 & 6)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Static DraintoSource OnState Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
Static DraintoSource OnState Resistance
(VGS = 4.5 Vdc, ID = 1.5 Adc)
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(VDS = 20 Vdc,
VGS = 0 Vdc,
f = 1.0 MHz)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
RDS(on)
gFS
Ciss
Coss
Crss
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
SWITCHING CHARACTERISTICS (Note 5)
TurnOn Delay Time
td(on)
(N)
(P)
Rise Time
TurnOff Delay Time
(VDD = 24 Vdc,
ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
tr
td(off)
(N)
(P)
(N)
(P)
Fall Time
tf (N)
(P)
Gate Charge
(VDS = 16 Vdc,
ID = 2.0 Adc,
VGS = 4.5 Vdc)
QT (N)
(P)
Qgs (N)
(P)
Qgd (N)
(P)
BODYDRAIN DIODE RATINGS (Note 6)
Diode Forward OnVoltage
(IS = 1.7 Adc,
VGS = 0 Vdc)
Reverse Recovery Time
VSD (N)
(P)
trr (N)
(P)
(IS = 2.0 Adc,
VGS = 0 Vdc,
dIS/dt = 100 A/μs)
ta (N)
(P)
tb (N)
(P)
Reverse Recovery Stored
Charge
Qrr
4. Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
5. Switching characteristics are independent of operating junction temperature.
6. Negative signs for PChannel device omitted for clarity.
(N)
(P)
Min
30
1.0
1.0
Typ Max Unit
− − Vdc
1.0 μAdc
1.0
100 nAdc
1.8
1.6
0.073
0.100
0.093
0.150
4.0
4.0
2.2
2.2
0.090
0.140
0.130
0.200
Vdc
W
W
mhos
190 300
325 550
75 150
110 175
30 60
40 75
pF
10 20
9.0 20
ns
7.0 15
11 20
20 35
25 40
5.0 15
13 25
3.0 5.0 nC
10 15
1.0
1.5
1.5
4.0
0.85
0.81
11
20
8.0
16
3.0
4.0
0.005
0.020
1.1
1.1
Vdc
ns
μC
http://onsemi.com
2


Part Number NTMC1300R2
Description Power MOSFET
Maker ON Semiconductor
Total Page 9 Pages
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