NTMD6601NR2G Description
NTMD6601NR2G Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8.
NTMD6601NR2G Key Features
- ăLow RDS(on) to Minimize Conduction Losses -ăLow Capacitance to Minimize Driver Losses -ăOptimized Gate Charge to Minimi
- Part: NTMD6601NR2G
- Manufacturer: onsemi (official site)
- Size: 91.32 KB
