NTMFD4902NF Datasheet Text
Dual N-Channel Power MOSFET with Integrated Schottky
30 V, High Side 18 A / Low Side 23 A, Dual N- Channel SO8FL
Features
- Co- Packaged Power Stage Solution to Minimize Board Space
- Low Side MOSFET with Integrated Schottky
- Minimized Parasitic Inductances
- Optimized Devices to Reduce Power Losses
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
Applications
- DC- DC Converters
- System Voltage Rails
- Point of Load
.onsemi.
V(BR)DSS
Q1 Top FET 30 V
Q2 Bottom FET 30 V
RDS(ON) MAX 6.5 mW @ 10 V 10 mW @ 4.5 V 4.1 mW @ 10 V 6.2 mW @ 4.5 V
ID MAX 18 A
23 A
D1 (2, 3, 4, 9)
(1) G1
S1/D2 (10)
© Semiconductor ponents Industries, LLC, 2015
April, 2015
- Rev. 4
(8) G2
S2 (5, 6, 7)
PIN CONNECTIONS
D1 4 D1 3 D1 2
9 10 D1 S1/D2...