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NTMFD4C50N Dual N-Channel Power MOSFET

NTMFD4C50N Description

NTMFD4C50N Dual N-Channel Power MOSFET 30 V, High Side 18 A / Low Side 27 A, Dual N *Channel SO8FL .

NTMFD4C50N Features

* Co
* Packaged Power Stage Solution to Minimize Board Space
* Minimized Parasitic Inductances
* Optimized Devices to Reduce Power Losses
* These Devices are Pb

NTMFD4C50N Applications

* DC
* DC Converters
* System Voltage Rails
* Point of Load http://onsemi. com V(BR)DSS Q1 Top FET 30 V Q2 Bottom FET 30 V RDS(ON) MAX 7.3 mW @ 10 V 10.8 mW @ 4.5 V 3.4 mW @ 10 V 5.2 mW @ 4.5 V ID MAX 18 A 27 A D1 (2, 3, 4, 9) (1) G1 S1/D2 (10) © Semiconductor Co

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