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NTMFS4825NFE
Power MOSFET
30 V, 171 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Includes Schottky Diode • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • These are Pb−Free Device
Applications
• CPU Power Delivery • DC−DC Converters • Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
29 A
TA = 85°C
21
Power Dissipation RqJA (Note 1)
Continuous Drain
Current 10 sec
RqJA
v
TA = 25°C
TA = 25°C TA = 85°C
PD ID
2.
NTMFS4825NFE Datasheet
