NTMFS4897NF - 30 V N-Channel Power MOSFET

Features

30 V, 171 A, Single N.
Channel, SO.
8 FL.
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses These are Pb.
Free Device http://onsemi. com.

onsemi

Datasheet Details

Part number	NTMFS4897NF
Manufacturer	onsemi
File Size	159.40 KB
Description	30 V N-Channel Power MOSFET
Datasheet	NTMFS4897NF Datasheet
Additional preview pages of the NTMFS4897NF datasheet.

📁 Similar Datasheet

NTMFS010N10G - N-Channel Power MOSFET (onsemi)
NTMFS2D1N08X - N-Channel Power MOSFET (onsemi)
NTMFS6H800NL - N-Channel Power MOSFET (onsemi)
NTMFSC1D9N08X - 80V 201A N-Channel Power MOSFET (onsemi)
NTMFSC2D6N08X - 80V 154A N-Channel Power MOSFET (onsemi)
NTM164M21 - LCD (ETC)
NTM164M21C - LCD (ETC)
NTM88H025S - Tire pressure monitor sensor (NXP)
NTM88H055S - Tire pressure monitor sensor (NXP)
NTM88H065S - Tire pressure monitor sensor (NXP)

Other Datasheets by ON Semiconductor

NTMFS4898NF - Power MOSFET
NTMFS4899NF - Power MOSFET
NTMFS4821N - Power MOSFET
NTMFS4823N - Power MOSFET
NTMFS4825NFE - Power MOSFET
NTMFS4833N - Power MOSFET
NTMFS4833NS - Power MOSFET
NTMFS4834N - Power MOSFET

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com NTMFS4897NF Power MOSFET Features 30 V, 171 A, Single N−Channel, SO−8 FL • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device http://onsemi.com Applications V(BR)DSS 30 V RDS(ON) MAX 2.0 mW @ 10 V 3.0 mW @ 4.

Published: Jul 3, 2010 |