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  ON Semiconductor Electronic Components Datasheet  

NTMFS4926NT1G Datasheet

Power MOSFET

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NTMFS4926N
Power MOSFET
30 V, 44 A, Single NChannel, SO8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Optimized for 5 V, 12 V Gate Drives
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
±20
15.5
9.8
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
2.70 W
23.4 A
14.8
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
6.13 W
9.0 A
5.7
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC =100°C
PD
ID
0.92 W
44 A
28
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TA = 25°C, tp = 10 ms
PD
IDM
21.6 W
182 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 20 V,
IL = 21 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
100
55 to
+150
21
6.0
22
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2012
May, 2012 Rev. 5
1
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
7.0 mW @ 10 V
11.2 mW @ 4.5 V
D (5,6)
ID MAX
44 A
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4926N
AYWZZ
D
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NTMFS4926NT1G
Package
SO8 FL
(PbFree)
Shipping
1500 /
Tape & Reel
NTMFS4926NT3G SO8 FL
(PbFree)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4926N/D


  ON Semiconductor Electronic Components Datasheet  

NTMFS4926NT1G Datasheet

Power MOSFET

No Preview Available !

NTMFS4926N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoAmbient – Steady State (Note 3)
JunctiontoAmbient – Steady State (Note 4)
JunctiontoAmbient – (t 10 s) (Note 3)
3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
RqJA
Value
5.8
46.3
136.2
20.4
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
(transient)
V(BR)DSS
V(BR)DSSt
VGS = 0 V, ID = 250 mA
VGS = 0 V, ID(aval) = 8.8 A,
Tcase =25°C, ttransient = 100 ns
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance
CISS
COSS
CRSS
CRSS /
CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 0 V, VDS = 15 V, f = 1 MHz
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 6)
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V; ID = 30 A
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min Typ Max
30
34
25
1.0
10
±100
1.32 1.6
3.8
5.6
5.6
9.0
8.7
40
2.2
7.0
11.2
1004
390
119
0.119
0.237
8.7
1.4
3.0
3.5
17.3
8.6
36.9
14.7
5.5
Unit
V
V
mV/°C
mA
nA
V
mV/°C
mW
S
pF
nC
nC
ns
http://onsemi.com
2


Part Number NTMFS4926NT1G
Description Power MOSFET
Maker ON Semiconductor
Total Page 7 Pages
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