Datasheet Summary
NTMFS4H01N Power MOSFET
25 V, 334 A, Single N- Channel, SO- 8FL
Features
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Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant High Performance DC-DC Converters System Voltage Rails Net, Tele Servers Point of Load http://onsemi.
VGS 4.5 V 10 V
MAX RDS(on) 0.97 mW 0.7 mW
TYP QGTOT 39 nC 85 nC
Applications
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- PIN CONNECTIONS SO8- FL (5 x 6 mm)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA...