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NTMFS4H01N Power MOSFET
25 V, 334 A, Single N−Channel, SO−8FL
Features
• • • •
Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers Point of Load
http://onsemi.com
VGS 4.5 V 10 V
MAX RDS(on) 0.97 mW 0.