NTP067N65S3H
NTP067N65S3H is N-Channel Power MOSFET manufactured by onsemi.
Description
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.
Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 55 m W
- Ultra Low Gate Charge (Typ. Qg = 80 n C)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 691 p F)
- 100% Avalanche Tested
- These Devices are Pb- Free and are Ro HS pliant
Applications
- Tele / Server Power Supplies
- Industrial Power Supplies
- EV Charger
- UPS / Solar
.onsemi.
VDSS 650 V
RDS(ON) MAX 67 m W @ 10 V
ID MAX 40 A
TO- 220- 3LD CASE 340AT
MARKING DIAGRAM
T067N 65S3H AYWWZZ
© Semiconductor ponents Industries, LLC, 2020
March, 2021
- Rev. 1
T067N65S3H A YWW ZZ
= Specific Device Code = Assembly Plant Code = Date Code (Year & Week) = Lot Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Publication Order Number:
NTP067N65S3H/D
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS VGSS
Drain to Source Voltage Gate to Source...
