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NTP13N10
Preferred Device
Power MOSFET
13 A, 100 V, N−Channel Enhancement−Mode TO−220
Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete • • •
Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Pb−Free Package is Available
VDSS 100 V
http://onsemi.com
RDS(ON) TYP 165 mΩ @ 10 V N−Channel D ID MAX 13 A
Typical Applications
• PWM Motor Controls • Power Supplies • Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.