Click to expand full text
www.DataSheet4U.com
NTQD4154Z Power MOSFET
20 V, 7.5 A, Common−Drain, Dual N−Channel TSSOP−8
Features
• Common Drain for Ease of Circuit Connection • Low RDS(on) Extending Battery Life • ESD Protected Gate
Applications
http://onsemi.com
V(BR)DSS RDS(on) TYP 15 mW @ 4.5 V 21 mW @ 2.5 V ID MAX
• Li−Ion Battery Protection Circuit • Power Management in Portable and Battery−Powered Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissi Dissipation ation (Note 2) Pulsed Drain Current Steady State TA = 25°C TA = 75°C PD ID Symbol VDSS VGS ID Value 20 ±12 7.5 5.8 1.52 9.8 7.6 PD IDM TJ, TSTG IS TL 2.6 30 −55 to 150 2.
NTQD4154Z Datasheet
