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NTR3162P
Power MOSFET
--20 V, --3.6 A, Single P--Channel, SOT--23
Features
• Low RDS(on) at Low Gate Voltage • --0.3 V Low Threshold Voltage • Fast Switching Speed • This is a Pb--Free Device
Applications
• Battery Management • Load Switch in PWM • Battery Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain--to--Source Voltage
Gate--to--Source Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady State
t≤5s
Steady State
t≤5s
TA = 25°C TA = 85°C TA = 25°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
VDSS VGS
ID
PD IDM TJ, Tstg IS TL
--20
V
±8
V
--2.2
--1.6 A
--3.6
0.
NTR3162PT3G Datasheet
