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  ON Semiconductor Electronic Components Datasheet  

NTR3162PT3G Datasheet

Power MOSFET

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NTR3162P
Power MOSFET
--20 V, --3.6 A, Single P--Channel, SOT--23
Features
Low RDS(on) at Low Gate Voltage
--0.3 V Low Threshold Voltage
Fast Switching Speed
This is a Pb--Free Device
Applications
Battery Management
Load Switch in PWM
Battery Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain--to--Source Voltage
Gate--to--Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t5s
Steady
State
t5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
VDSS
VGS
ID
PD
IDM
TJ,
Tstg
IS
TL
--20
V
±8
V
--2.2
--1.6 A
--3.6
0.48
W
1.25
--10.7 A
--55 to
150
°C
--0.6 A
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction--to--Ambient -- Steady State (Note 1)
RθJA
260 °C/W
Junction--to--Ambient -- t < 10 s (Note 1)
RθJA
100
1. Surface--mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
http://onsemi.com
V(BR)DSS
--20 V
RDS(on) MAX
70 mΩ @ --4.5 V
95 mΩ @ --2.5 V
120 mΩ @ --1.8 V
ID MAX
--2.2 A
--1.9 A
--1.7 A
P--CHANNEL MOSFET
S
G
D
3
1
2
SOT--23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
TRDMG
G
1
1
Gate
2
Source
TRD = Specific Device Code
M
= Date Code
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTR3162PT1G SOT--23
(Pb--Free)
3000 /
Tape & Reel
NTR3162PT3G SOT--23
(Pb--Free)
10000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
June, 2010 -- Rev. 2
Publication Order Number:
NTR3162P/D


  ON Semiconductor Electronic Components Datasheet  

NTR3162PT3G Datasheet

Power MOSFET

No Preview Available !

NTR3162P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage V(BR)DSS
VGS = 0 V, ID = --250 mA
--20
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
/TJ
ID = --250 mA, Reference to 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = --16 V, TJ = 25°C
VGS = 0 V, VDS = --16 V, TJ = 85°C
Gate--to--Source Leakage Current
IGSS
VDS = 0 V, VGS = 8 V
ON CHARACTERISTICS (Note 3)
14.5
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)
/TJ
VGS = VDS, ID = --250 mA
--0.3
--0.6
2.5
Drain--to--Source On--Resistance
RDS(on)
VGS = --4.5 V, ID = --2.2 A
48
VGS = --2.5 V, ID = --1.9 A
57
VGS = --1.8 V, ID = --1.7 A
72
VGS = --1.5 V, ID = --1.0 A
88
Forward Transconductance
gFS
VDS = --5.0 V, ID = --2.2 A
9.0
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Ciss
940
Output Capacitance
Coss
VGS = 0 V, f = 1.0 MHz,
VDS = --10 V
140
Reverse Transfer Capacitance
Crss
100
Total Gate Charge
QG(TOT)
10.3
Threshold Gate Charge
QG(TH)
VGS = --4.5 V, VDS = --10 V,
0.5
Gate--to--Source Charge
QGS
ID = --3.6 A
1.4
Gate--to--Drain Charge
QGD
2.7
Gate Resistance
RG
6.0
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time
td(on)
8.0
Rise Time
tr
VGS = --4.5 V, VDD = --10 V,
15
Turn--Off Delay Time
td(off)
ID = --3.6 A, RG = 6 Ω
31
Fall Time
tf
50
DRAIN--SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = --1.0 A, TJ = 25°C
0.7
Reverse Recovery Time
tRR
25
Charge Time
Discharge Time
ta
VGS = 0 V, ID = --1.0 A,
8.0
tb
dISD/dt = 100 A/ms
17
Reverse Recovery Charge
QRR
11
2. Surface--mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
Max
Units
V
mV/°C
--1.0
mA
--5.0
±100
nA
--1.0
V
mV/°C
70
mΩ
95
120
S
pF
nC
Ω
ns
1.2
V
ns
nC
http://onsemi.com
2


Part Number NTR3162PT3G
Description Power MOSFET
Maker ON Semiconductor
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