NTR4170N
NTR4170N is Power MOSFET manufactured by onsemi.
Features
- Low RDS(on)
- Low Gate Charge
- Low Threshold Voltage
- Halide Free
- This is a Pb- Free Device
Applications
- Power Converters for Portables
- Battery Management
- Load/Power Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain- to- Source Voltage
VDSS 30 V
Gate- to- Source Voltage
VGS ±12 V
Continuous Drain Current (Note 1)
Steady State
2.4 t ≤ 30 s TA = 25°C
3.1 t ≤ 10 s Steady State t ≤ 30 s
TA = 85°C
3.9 1.7 A 2.3 t ≤ 10 s
Power Dissipation (Note 1)
Steady State t ≤ 30 s
TA = 25°C
0.48 W 0.82 t ≤ 10 s
Pulsed Drain Current tp = 10 ms
Operating Junction and Storage Temperature
PD 1.25
IDM 8.0 A
TJ, Tstg
- 55 to 150
°C
Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
IS 0.82 A TL 260...
