NTTFS012N10MD Description
MOSFET Power, Single N-Channel 100 V, 14.4 mW, 45 A NTTFS012N10MD.
NTTFS012N10MD Key Features
- Shielded Gate MOSFET Technology
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Low QRR, Soft Recovery Body Diode
- Low QOSS to Improve Light Load Efficiency
- These Devices are Pb-Free, Halogen Free/BFR Free, Beryllium Free
NTTFS012N10MD Applications
- Primary Switch in Isolated DC−DC Converter
- Synchronous Rectification (SR) in DC−DC and AC−DC