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NTTFS5116PL
MOSFET – Power
-60 V, -20 A, 52 mW
Features
• Low RDS(on) • Fast Switching • These Devices are Pb−Free and are RoHS Compliant
Applications
• Load Switches • DC Motor Control • DC−DC Conversion
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
Continuous Drain Current RqJC (Note 1)
Power Dissipation RqJC (Note 1)
Pulsed Drain Current
TA = 25°C TA = 100°C TA = 25°C Steady TA = 100°C State TC = 25°C TC = 100°C TC = 25°C TC = 100°C tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
L = 0.
NTTFS5116PL Datasheet
