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NTTFS5811NL
MOSFET – Power, Single, N-Channel
40 V, 6.7 mW, 40 A
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Cur-
Tmb = 25°C
ID
rent RYJ−mb (Notes 1, 2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State Tmb = 25°C
PD
RYJ−mb (Notes 1, 2, 3)
Tmb = 100°C
40
A
28
21
W
10
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1 & 3, 4)
Steady TA = 100°C
Power Dissipation RqJA (Notes 1, 3)
State TA = 25°C
PD
TA = 100°C
16
A
11
3.2
W
1.
NTTFS5811NL Datasheet
