NTTFS6H888N Datasheet - ON Semiconductor

N-Channel Power MOSFET

* Small Footprint (3.3 x 3.3 mm) for Compact Design

* Low RDS(on) to Minimize Conduction Losses

* Low Capacitance to Minimize Driver Losses

* These Devices are Pb

* Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbo

NTTFS6H888N

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N-channel power mosfet.

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NTTFS6H888N N-Channel Power MOSFET ON Semiconductor

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