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NUS6189MN - Low Profile Overvoltage Protection

Datasheet Summary

Description

to the more negative side of the current sense resistor.

Features

  • Overvoltage Turn.
  • Off Time of Less Than 1.0 ms.
  • Accurate Voltage Threshold of 6.85 V, Nominal.
  • Undervoltage Lockout Protection; 2.8 V, Nominal.
  • High Accuracy Undervoltage Threshold of 2.0%.
  • 30 V Integrated P.
  • Channel Power MOSFET.
  • Low RDS(on) = 50 mW @.
  • 4.5 V.
  • High Performance.
  • 12 V P.
  • Channel Power MOSFET.
  • Single.
  • Low Vce(sat) Transistors as Charging Power Mux.

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Datasheet Details

Part number NUS6189MN
Manufacturer ON Semiconductor
File Size 170.57 KB
Description Low Profile Overvoltage Protection
Datasheet download datasheet NUS6189MN Datasheet
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NUS6189MN Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining an overvoltage protection circuit (OVP) with a 30 V P−channel power MOSFET, a low VCE(SAT) transistor, and low RDS(on) power MOSFET or charging. The OVP is specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such events, the IC quickly disconnects the input supply from the load, thus protecting it. The integration of the additional transistor and power MOSFET reduces layout space and promotes better charging performance.
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