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NVBG020N090SC1 - N-Channel MOSFET

Key Features

  • Typ. RDS(on) = 20 mW @ VGS = 15 V.
  • Typ. RDS(on) = 16 mW @ VGS = 18 V.
  • Ultra Low Gate Charge (typ. QG(tot) = 200 nC).
  • Low Effective Output Capacitance (typ. Coss = 295 pF).
  • 100% Avalanche Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, D2PAK-7L NVBG020N090SC1 Features • Typ. RDS(on) = 20 mW @ VGS = 15 V • Typ. RDS(on) = 16 mW @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 200 nC) • Low Effective Output Capacitance (typ.