NVBG020N120SC1 Datasheet - ON Semiconductor

SiC MOSFET

* Typ. RDS(on) = 20 mW

* Ultra Low Gate Charge (typ. QG(tot) = 220 nC)

* Low Effective Output Capacitance (typ. Coss = 258 pF)

* 100% Avalanche Tested

* AEC

* Q101 Qualified and PPAP Capable

* This Device is Halide Free and RoHS Compliant with ex

NVBG020N120SC1

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Sic mosfet.

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NVBG020N120SC1 SiC MOSFET ON Semiconductor

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