Datasheet Summary
MOSFET
- Power, Single N-Channel, TOLL
100 V, 1.8 mW, 265 A
Features
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- AEC- Q101 Qualified and PPAP Capable
- Lowers Switching Noise/EMI
- These Devices are Pb- Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
Steady TC = 100°C
State TC = 25°C
TC = 100°C
303 W
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA...