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  ON Semiconductor Electronic Components Datasheet  

NVF5P03T3G Datasheet

Power MOSFET

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NTF5P03, NVF5P03
Power MOSFET
-5.2 A, -30 V
PChannel SOT223
Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature SOT223 Surface Mount Package
Avalanche Energy Specified
AECQ101 Qualified and PPAP Capable NVF5P03T3G
These Devices are PbFree and are RoHS Compliant
Applications
DCDC Converters
Power Management
Motor Controls
Inductive Loads
Replaces MMFT5P03HD
© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 6
1
http://onsemi.com
5.2 AMPERES, 30 VOLTS
RDS(on) = 100 mW
S
G
D
PChannel MOSFET
4
12
3
SOT223
CASE 318E
STYLE 3
MARKING
DIAGRAM
& PIN
ASSIGNMENT
Drain
4
AYM
5P03 G
G
1 23
Gate Drain Source
A = Assembly Location
Y = Year
M = Date Code
5P03 = Specific Device Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTF5P03T3G
Package
SOT223
(PbFree)
Shipping
4000 / Tape &
Reel
NVF5P03T3G
SOT223
(PbFree)
4000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTF5P03T3/D


  ON Semiconductor Electronic Components Datasheet  

NVF5P03T3G Datasheet

Power MOSFET

No Preview Available !

NTF5P03, NVF5P03
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for PChannel devices omitted for clarity
Rating
Symbol
Max
Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MW)
GatetoSource Voltage Continuous
1 sq in
FR4 or G10 PCB
10 seconds
Thermal Resistance Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1)
Minimum
FR4 or G10 PCB
10 seconds
Thermal Resistance Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1)
VDSS
VDGR
VGS
RTHJA
PD
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
30
30
± 20
40
3.13
25
5.2
4.1
26
80
1.56
12.5
3.7
2.9
19
V
V
V
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.5 mH, RG = 25 W)
EAS mJ
250
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Repetitive rating; pulse width limited by maximum junction temperature.
http://onsemi.com
2


Part Number NVF5P03T3G
Description Power MOSFET
Maker ON Semiconductor
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