NVH025N65S3 Datasheet - ON Semiconductor

Automotive N-Channel MOSFET

NVH025N65S3 Features

* AEC

* Q101 Qualified

* Max Junction Temperature 150°C

* Typ. RDS(on) = 19.9 mΩ

* Ultra Low Gate Charge (Typ. QG = 236 nC)

* Low Effective Output Capacitance (Typ. COSS(eff.) = 2062 pF)

* 100% Avalanche Tested Typical Applications

* Auto

NVH025N65S3 General Description

SuperFET III MOSFET is On semiconductor’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss.

NVH025N65S3 Datasheet (234.31 KB)