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NVMFS9D6P04M8L - P-Channel MOSFET

Key Features

  • Small Footprint for Compact Design.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • NVMFWS9D6P04M8L.
  • Wettable Flanks Product.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free, Halogen Free/BFR.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

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DATA SHEET www.onsemi.com MOSFET - Power, Single P-Channel -40 V, 9.5 mW, -77 A NVMFS9D6P04M8L Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFWS9D6P04M8L − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 2, 4) Power Dissipation RqJC (Notes 1, 2) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C −77.0 A −54.