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NTMS4816N, NVMS4816N
Power MOSFET
30 V, 11 A, N−Channel, SO−8
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVMS4816N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Disk Drives • DC−DC Converters • Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
Steady State
Power Dissipation (Note 1)
RqJA
Steady State
TA = 25°C TA = 70°C TA = 25°C
VDSS VGS ID
PD
30 ±20 9.0 7.2 1.37
Continuous Drain Current RqJA (Note 2)
Steady State
TA = 25°C TA = 70°C
ID
6.8 5.
NVMS4816N Datasheet
