NVTFS6H860N Overview
MOSFET - Power, Single, N-Channel 80 V, 21.1 mW, 33 A NVTFS6H860N Features • Small Footprint (3.3 x 3.3 mm) for pact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H860NWF − Wettable Flanks Product Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 1.5 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 38 A EAS 138 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
NVTFS6H860N Key Features
- Small Footprint (3.3 x 3.3 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- NVTFS6H860NWF
- Wettable Flanks Product
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant
- Steady State (Note 3)
- Steady State (Note 3)
- Rev. 2