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  ON Semiconductor Electronic Components Datasheet  

NVTR4502PT1G Datasheet

Power MOSFET

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NTR4502P, NVTR4502P
Power MOSFET
30 V, 1.95 A, Single, PChannel,
SOT23
Features
Leading Planar Technology for Low Gate Charge / Fast Switching
Low RDS(ON) for Low Conduction Losses
SOT23 Surface Mount for Small Footprint (3 X 3 mm)
AEC Q101 Qualified NVTR4502P
These Devices are PbFree and are RoHS Compliant
Applications
DC to DC Conversion
Load/Power Switch for Portables and Computing
Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.
Battery Charging Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
Drain Current (Note 1)
Power Dissipation
(Note 1)
t < 10 s TA = 25°C
TA = 70°C
t < 10 s
VDSS
VGS
ID
PD
30
±20
1.95
1.56
1.25
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State
TA = 70°C
Steady State
ID
PD
1.13
0.90
0.4
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
IDM
TJ,
TSTG
IS
TL
6.8
55 to
150
1.25
260
Unit
V
V
A
W
A
W
A
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoAmbient – Steady State (Note 1)
RqJA
300 °C/W
JunctiontoAmbient – t = 10 s (Note 1)
RqJA
100
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
155 mW @ 10 V
240 mW @ 4.5 V
ID Max (Note 1)
1.95 A
PChannel MOSFET
S
G
D
SOT23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain
3
TR2 M G
G
1
Gate
2
Source
TR2 = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NTR4502PT1G SOT23 3000 / Tape & Reel
(PbFree)
NVTR4502PT1G SOT23 3000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
August, 2011 Rev. 5
1
Publication Order Number:
NTR4502P/D


  ON Semiconductor Electronic Components Datasheet  

NVTR4502PT1G Datasheet

Power MOSFET

No Preview Available !

NTR4502P, NVTR4502P
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V, VDS = 30 V
TJ = 25°C
TJ = 55°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
DraintoSource On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 1.95 A
VGS = 4.5 V, ID = 1.5 A
VDS = 10 V, ID=1.25 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 10 V, VDS = 15 V; ID = 1.95 A
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS (Note 3)
VGS =10 V, VDD = 15 V,
ID = 1.95 A, RG = 6 W
Forward Diode Voltage
VSD VGS = 0 V, IS = 1.25 A
Reverse Recovery Time
tRR VGS = 0 V, dISD/dt = 100 A/ms, IS = 1.25 A
2. Surfacemounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.0
Typ
155
240
3
200
80
50
6
0.3
1
1.7
5.2
12
19
17.5
0.8
23
Max Unit
1
10
±100
V
mA
nA
3.0 V
200 mW
350
S
pF
10 nC
10 ns
20
35
30
1.2 V
ns
http://onsemi.com
2


Part Number NVTR4502PT1G
Description Power MOSFET
Maker ON Semiconductor
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