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NXH240B120H3Q1PG-R - 3-Channel Q1 BOOST Module

Download the NXH240B120H3Q1PG-R datasheet PDF. This datasheet also covers the NXH240B120H3Q1PG variant, as both devices belong to the same 3-channel q1 boost module family and are provided as variant models within a single manufacturer datasheet.

Features

  • 1200 V Ultra Field Stop IGBTs.
  • Low Reverse Recovery and Fast Switching SiC Diodes.
  • Low Inductive Layout.
  • Press.
  • fit Pins.
  • Thermistor Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NXH240B120H3Q1PG-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
3 Channel Q1 BOOST Module NXH240B120H3Q1PG, NXH240B120H3Q1PG-R, NXH240B120H3Q1SG The NXH240B120H3Q1PG is a case power module containing a three channel BOOST stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V Ultra Field Stop IGBTs • Low Reverse Recovery and Fast Switching SiC Diodes • Low Inductive Layout • Press−fit Pins • Thermistor Typical Applications • Solar Inverters • ESS 21, 22 BYS1 19, 20 BST1 16 G1 15 E1 D13 T1 D12 D11 23, 24 BYS2 25, 26 BST2 10 G2 9 E2 D23 T2 D22 D21 DC+1−2 11, 12 13, 14 DC−1 17, 18 NTC1 31 NTC2 32 DC−2 7, 8 29, 30 BYS3 27, 28 BST3 4 G3 3 E3 D33 T3 D32 D31 DC+3 1, 2 5, 6 DC−3 Figure 1.
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