NXH240B120H3Q1PG Description
The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
NXH240B120H3Q1PG Key Features
- 1200 V Ultra Field Stop IGBTs
- Low Reverse Recovery and Fast Switching SiC Diodes
- Low Inductive Layout
- Press-fit Pins
- Thermistor