NXH350N100H4Q2F2S1G-R Datasheet | onsemi

DATA SHEET .onsemi. Si/Si C Hybrid Module - Elite Si C, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A Si C Diode, Q2 Package NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G-R, NXH350N100H4Q2F2P1G-R This high- density, integrated power module bines high- performance IGBTs with rugged anti- parallel diodes. Features - Extremely Efficient Trench with Field Stop Technology - Low Switching Loss Reduces System Power Dissipation - Module Design Offers High Power Density - Low Inductive Layout - Low Package Height - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant Typical Applications - Solar Inverters - Uninterruptable Power Supplies Systems PACKAGE PICTURE Q2PACK INPC PRESS FIT PINS CASE 180BH Q2PACK INPC SOLDER PINS CASE 180BS MARKING DIAGRAM NXH350N100H4Q2F2P1G/S1G/S1G- R/P1G- R ATYYWW G = Pb- Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code PIN CONNECTIONS See details pin connections on page 2 of this data sheet. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Figure 1. NXH350N100H4Q2F2P1G/S1G/S1G- R/P1G- R Schematic Diagram © Semiconductor ponents Industries, LLC, 2020 March, 2023 - Rev....