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NXH600B100H4Q2F2PG - Si/SiC Hybrid Module

Key Features

  • Extremely Efficient Trench with Field Stop Technology.
  • Low Switching Loss Reduces System Power Dissipation.
  • Module Design Offers High Power Density.
  • Low Inductive Layout.
  • Low Package Height.
  • Pb.
  • Free, Halogen Free/BFR Free and RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

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Si/SiC Hybrid Module – EliteSiC, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG-R The NXH600B100H4Q2 is a Si/SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 200 A IGBTs, and two 1200 V, 60 A SiC diodes. The module contains an NTC thermistor. Features • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layout • Low Package Height • Pb−Free, Halogen Free/BFR Free and RoHS Compliant Typical Applications • Solar Inverters • Uninterruptable Power Supplies Systems DATA SHEET www.onsemi.