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  ON Semiconductor Electronic Components Datasheet  

P2N2222ARL1G Datasheet

NPN Amplifier Transistor

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P2N2222A
Amplifier Transistors
NPN Silicon
Features
These are PbFree Devices*
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector Emitter Voltage
VCEO
40
Collector Base Voltage
VCBO
75
EmitterBase Voltage
VEBO
6.0
Collector Current Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
IC
600
PD
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to
°C
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Ambient
RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
P2N2
222A
AYWW G
G
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
January, 2013 Rev. 7
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
P2N2222AG
TO92
5000 Units/Bulk
(PbFree)
P2N2222ARL1G TO92 2000/Tape & Ammo
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
P2N2222A/D


  ON Semiconductor Electronic Components Datasheet  

P2N2222ARL1G Datasheet

NPN Amplifier Transistor

No Preview Available !

P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 10 V)
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 1)
Collector Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (Note 2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)C
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
http://onsemi.com
2
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
ICEO
IBEX
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
hoe
rbCc
NF
Min
40
75
6.0
35
50
75
35
100
50
40
0.6
300
2.0
0.25
50
75
5.0
25
Max
Unit
Vdc
Vdc
Vdc
nAdc
10
mAdc
0.01
10
10
nAdc
nAdc
10
nAdc
20
300
Vdc
0.3
1.0
Vdc
1.2
2.0
MHz
pF
8.0
pF
25
kW
8.0
1.25
X 104
8.0
4.0
300
375
mMhos
35
200
ps
150
dB
4.0


Part Number P2N2222ARL1G
Description NPN Amplifier Transistor
Maker ON Semiconductor
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