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P65N02RG - Power MOSFET

Key Features

  • Planar HD3e Process for Fast Switching Performance.
  • Low RDSon to Minimize Conduction Loss.
  • Low Ciss to Minimize Driver Loss.
  • Low Gate Charge.
  • Pb.
  • Free Packages are Available.
  • http://onsemi. com V(BR)DSS 24 V RDS(on) TYP 8.4 mW @ 10 V ID MAX 65 A D.

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NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • Planar HD3e Process for Fast Switching Performance • Low RDSon to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Pb−Free Packages are Available* http://onsemi.com V(BR)DSS 24 V RDS(on) TYP 8.4 mW @ 10 V ID MAX 65 A D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current − Continuous @ TC = 25°C, Chip Continuous @ TC =25°C, Limited by Package Single Pulse (tp = 10 ms) VDSS VGS RqJC PD ID ID IDM 25 ±20 2.0 62.