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QEB373 - Subminiature Plastic Infrared Emitting Diode

General Description

T

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Key Features

  • T.
  • 3/4 (2 mm) Surface Mount Package.
  • Lead Form Options: Gullwing, Yoke, Z.
  • Bend.
  • Narrow Emission Angle, 24°.
  • Wavelength = 875 nm, AlGaAs.
  • Clear Lens.
  • Matched Photosensor: QSB363.
  • High Radiant Intensity.
  • This is a Pb.
  • Free and Halide Free Device T.
  • 3/4, 2.50 y 2.00 CASE 100EE T.
  • 3/4, 2.50 y 2.00 CASE 100EG.

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Datasheet Details

Part number QEB373
Manufacturer onsemi
File Size 504.13 KB
Description Subminiature Plastic Infrared Emitting Diode
Datasheet download datasheet QEB373 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Subminiature Plastic Infrared Emitting Diode DATA SHEET www.onsemi.com QEB373 Features • T−3/4 (2 mm) Surface Mount Package • Lead Form Options: Gullwing, Yoke, Z−Bend • Narrow Emission Angle, 24° • Wavelength = 875 nm, AlGaAs • Clear Lens • Matched Photosensor: QSB363 • High Radiant Intensity • This is a Pb−Free and Halide Free Device T−3/4, 2.50 y 2.00 CASE 100EE T−3/4, 2.50 y 2.