
	ON Semiconductor Electronic Components Datasheet

QRE1113 Datasheet

Miniature Reflective Object Sensor

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QRE1113, QRE1113GR

Miniature Reflective

Object Sensor

Features

• Phototransistor Output

• No Contact Surface Sensing

• Miniature Package

• Lead Form Style: Gull Wing

• Two Leadform Options:

♦ Through Hole (QRE1113)

♦ SMT Gull Wing (QRE1113GR)

• Two Packaging Options:

♦ Tube (QRE1113)

♦ Tape and Reel (QRE1113GR)

www.onsemi.com

Pin 1: Anode

Pin 2: Cathode

Pin 3: Collector

Pin 4: Emitter

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

TOPR

TSTG

TSOL−I

Operating Temperature

Storage Temperature

Soldering Temperature (Iron)

(Notes 2, 3, 4)

−40 to +85

−40 to +90

240 for 5 s

°C

TSOL−F

Soldering Temperature (Flow)

(Notes 3, 4)

260 for 10 s

°C

EMITTER

IFP

SENSOR

Continuous Forward Current

Reverse Voltage

Peak Forward Current (Note 5)

Power Dissipation (Note 1)

50 mA

75 mW

VCEO

Collector-Emitter Voltage

30 V

VECO

Emitter-Collector Voltage

IC Collector Current

20 mA

PD Power Dissipation (Note 1)

50 mW

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Derate power dissipation linearly 1.00 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16″ (1.6 mm) from housing.

5. Pulse conditions: tp = 100 ms; T = 10 ms.

REFLECTIVE RECTANGULAR SURFACE MOUNT

CASE 100CY

REFLECTIVE RECTANGULAR THROUGH HOLE

CASE 100AQ

ORDERING INFORMATION

Device

Package

Shipping†

QRE1113

Reflective

Rectangular

(Through Hole)

1600 / Tube

QRE1113GR

Reflective

Rectangular

(Surface Mount)

1000 /

Tape & Reel

†For information on tape and reel specifications, in-

cluding part orientation and tape sizes, please refer

to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

March, 2019 − Rev. 6

Publication Order Number:

QRE1113/D


	ON Semiconductor Electronic Components Datasheet

QRE1113 Datasheet

Miniature Reflective Object Sensor

No Preview Available !

QRE1113, QRE1113GR

ELECTRICAL/OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Unit

INPUT DIODE

VF Forward Voltage

IF = 20 mA

1.2 1.6

lR Reverse Leakage Current

VR = 5 V

10 mA

lPE Peak Emission Wavelength

IF = 20 mA

940 nm

OUTPUT TRANSISTOR

lD Collector-Emitter Dark Current IF = 0 mA, VCE = 20 V

100 nA

COUPLED

lC(ON)

On-State Collector Current

IF = 20 mA, VCE = 5 V (Note 6)

0.10 0.90

ICX Cross-Talk Collector Current

IF = 20 mA, VCE = 5 V (Note 7)

1 mA

VCE(SAT) Saturation Voltage

0.3 V

tr Rise Time

VCC = 5 V, lC(ON) = 100 mA, RL = 100 kW

20 ms

tf Fall Time

20 ms

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

6. Measured using an aluminum alloy mirror at d = 1 mm.

7. No reflective surface at close proximity.

1°C to 5°C/sec

REFLOW PROFILE

1°C to 5°C/sec

260°C max. for 10 sec. max.

260°C

Pre−heating

180°C to 200°C

60 sec. max.

above 220°C

220°C

120 sec. max.

Time (seconds)

Figure 1. Reflow Profile

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QRE1113 Datasheet

Miniature Reflective Object Sensor

QRE1113 Datasheet

Miniature Reflective Object Sensor

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