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  ON Semiconductor Electronic Components Datasheet  

QRE1113 Datasheet

Miniature Reflective Object Sensor

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QRE1113, QRE1113GR
Miniature Reflective
Object Sensor
Features
Phototransistor Output
No Contact Surface Sensing
Miniature Package
Lead Form Style: Gull Wing
Two Leadform Options:
Through Hole (QRE1113)
SMT Gull Wing (QRE1113GR)
Two Packaging Options:
Tube (QRE1113)
Tape and Reel (QRE1113GR)
www.onsemi.com
12
34
Pin 1: Anode
Pin 2: Cathode
Pin 3: Collector
Pin 4: Emitter
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
TOPR
TSTG
TSOLI
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(Notes 2, 3, 4)
40 to +85
40 to +90
240 for 5 s
°C
°C
°C
TSOLF
Soldering Temperature (Flow)
(Notes 3, 4)
260 for 10 s
°C
EMITTER
IF
VR
IFP
PD
SENSOR
Continuous Forward Current
Reverse Voltage
Peak Forward Current (Note 5)
Power Dissipation (Note 1)
50 mA
5V
1A
75 mW
VCEO
Collector-Emitter Voltage
30 V
VECO
Emitter-Collector Voltage
5V
IC Collector Current
20 mA
PD Power Dissipation (Note 1)
50 mW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Derate power dissipation linearly 1.00 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16(1.6 mm) from housing.
5. Pulse conditions: tp = 100 ms; T = 10 ms.
REFLECTIVE RECTANGULAR SURFACE MOUNT
CASE 100CY
REFLECTIVE RECTANGULAR THROUGH HOLE
CASE 100AQ
ORDERING INFORMATION
Device
Package
Shipping
QRE1113
Reflective
Rectangular
(Through Hole)
1600 / Tube
QRE1113GR
Reflective
Rectangular
(Surface Mount)
1000 /
Tape & Reel
†For information on tape and reel specifications, in-
cluding part orientation and tape sizes, please refer
to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2002
March, 2019 Rev. 6
1
Publication Order Number:
QRE1113/D


  ON Semiconductor Electronic Components Datasheet  

QRE1113 Datasheet

Miniature Reflective Object Sensor

No Preview Available !

QRE1113, QRE1113GR
ELECTRICAL/OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Unit
INPUT DIODE
VF Forward Voltage
IF = 20 mA
1.2 1.6
V
lR Reverse Leakage Current
VR = 5 V
10 mA
lPE Peak Emission Wavelength
IF = 20 mA
940 nm
OUTPUT TRANSISTOR
lD Collector-Emitter Dark Current IF = 0 mA, VCE = 20 V
100 nA
COUPLED
lC(ON)
On-State Collector Current
IF = 20 mA, VCE = 5 V (Note 6)
0.10 0.90
mA
ICX Cross-Talk Collector Current
IF = 20 mA, VCE = 5 V (Note 7)
1 mA
VCE(SAT) Saturation Voltage
0.3 V
tr Rise Time
VCC = 5 V, lC(ON) = 100 mA, RL = 100 kW
20 ms
tf Fall Time
20 ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Measured using an aluminum alloy mirror at d = 1 mm.
7. No reflective surface at close proximity.
1°C to 5°C/sec
REFLOW PROFILE
1°C to 5°C/sec
260°C max. for 10 sec. max.
260°C
Preheating
180°C to 200°C
60 sec. max.
above 220°C
220°C
120 sec. max.
Time (seconds)
Figure 1. Reflow Profile
www.onsemi.com
2


Part Number QRE1113
Description Miniature Reflective Object Sensor
Maker ON Semiconductor
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QRE1113 Datasheet PDF






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