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RB751S40T1 Datasheet

Schottky Barrier Diode

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RB751S40T1
Schottky Barrier Diode
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
Extremely Fast Switching Speed
Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1.0 mAdc
Low Reverse Current
Lead−Free Plating
Pb−Free Package is Available
http://onsemi.com
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Reverse Voltage
VRM
40
V
Reverse Voltage
VR 30 V
Forward Continuous Current (DC) IF 30 mA
Peak Forward Surge Current
IFSM 500 mA
ESD Rating: Class 1C per Human Body Model
Class A per Machine Model
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
200 mW
1.57 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
635 °C/W
Junction and Storage
Temperature Range
1. FR−5 Minimum Pad.
TJ, Tstg −55 to +150 °C
2
1
SOD−523
CASE 502
PLASTIC
MARKING DIAGRAM
5E MG
G
12
5E = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
RB751S40T1
Package
SOD−523
Shipping
4000/Tape & Reel
RB751S40T1G SOD−523 4000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1
Publication Order Number:
RB751S40T1/D


  ON Semiconductor Electronic Components Datasheet  

RB751S40T1 Datasheet

Schottky Barrier Diode

No Preview Available !

RB751S40T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage
(IR = 10 mA)
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
V(BR)R
30
V
CT − 2.0 2.5 pF
Reverse Leakage
(VR = 30 V)
Forward Voltage
(IF = 1.0 mAdc)
IR − 300 500 nAdc
VF − 0.28 0.37 Vdc
10
1.0
150 °C
125 °C 85°C 25°C −40 °C −55 °C
0.1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1000
100 TA = 150°C
125°C
10
85°C
1.0
0.1
25°C
0.01
0.001
0
5 10 15 20 25 30 35
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current versus Reverse
Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0
0 2.0 4.0 6.0 8.0 10 12 14 16 18
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
http://onsemi.com
2


Part Number RB751S40T1
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 4 Pages
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