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RFD16N05LSM
Product Preview MOSFET - Power, N-Channel, Logic Level
50 V, 16 A, 47 mW
These are N−Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5 V) driving sources in applications such as programmable controllers, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3 V to 5 V range, thereby facilitating true on−off power control directly from logic circuit supply voltages.
RFD16N05LSM Datasheet
