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RHRG3060 Datasheet

Hyperfast Diode

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Hyperfast Diode
30 A, 400 V 600 V
RHRG3040, RHRG3060
Description
The RHRG3040, RHRG3060 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes and is
silicon nitride passivated ionimplanted epitaxial planar construction.
These devices are intended to be used as freewheeling/clamping
diodes and diodes in a variety of switching power supplies and other
power switching applications. Their low stored charge and hyperfast
soft recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transistors.
Features
Hyperfast Recovery trr = 45 ns (@ IF = 30 A)
Max Forward Voltage, VF = 2.1 V (@ TC = 25°C)
400 V, 600 V Reverse Voltage and High Reliability
Avalanche Energy Rated
These Devices are PbFree and are RoHS Compliant
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
www.onsemi.com
CATHODE
ANODE
CATHODE
(BOTTOM
SIDE METAL)
TO2472LD
CASE 340CL
SYMBOL
K
A
MARKING DIAGRAM
$Y&Z&3&K
RHRG30XX
© Semiconductor Components Industries, LLC, 2001
March, 2020 Rev. 3
$Y
&Z
&3
&K
RHRG30XX
XX
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
= 40, 60
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
RHRG3060/D


  ON Semiconductor Electronic Components Datasheet  

RHRG3060 Datasheet

Hyperfast Diode

No Preview Available !

RHRG3040, RHRG3060
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
Parameter
Symbol
RHRG3040 RHRG3060
Unit
Peak Repetitive Reverse Voltage
VRRM
400
600
V
Working Peak Reverse Voltage
VRWM
400
600
V
DC Blocking Voltage
VR
400
600
V
Average Rectified Forward Current (TC = 120°C)
IF(AV)
30
30
A
Repetitive Peak Surge Current (Square Wave, 20 kHz)
IFRM
70
70
A
Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz)
IFSM
325
325
A
Maximum Power Dissipation
PD
125
125
W
Avalanche Energy (See Figures 10 and 11)
EAVL
20
20
mJ
Operating and Storage Temperature
TSTG, TJ
65 to 175
65 to 175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
RHRG3040
RHRG3040
RHRG3060
RHRG3060
Package
TO2472LD
TO2472LD
Shipping
450 / Tube
450 / Tube
ELECTRICAL SPECIFICATION (TC = 25°C, unless otherwise specified)
RHRG3040
RHRG3060
Characteristics
Instantaneous Forward Voltage
(Pulse Width = 300 ms,
Duty Cycle = 2%)
Instantaneous Reverse Current
Reverse Recovery Time
(See Figure 9)
Summation of ta + tb
Time to Reach Peak Reverse
Current (See Figure 9)
Symbol
VF
IR
trr
ta
Test Condition
IF = 30 A
IF = 30 A, TC = 150°C
VR = 400 V
VR = 600 V
VR = 400 V, TC = 150°C
VR = 600 V, TC = 150°C
IF = 1 A, dIF/dt = 200 A/ms
IF = 30 A, dIF/dt = 200 A/ms
IF = 30 A, dIF/dt = 200 A/ms
Min Typ Max Min Typ Max Unit
2.1
2.1
V
1.7
1.7
V
250
mA
250 mA
1.0
mA
1.0 mA
40
40
ns
45
45
ns
22
22
ns
Time from Peak IRM to Projected
Zero Crossing of IRM Based
on a Straight Line from Peak IRM
through 25% of IRM
(See Figure 9)
tb
IF = 30 A, dIF/dt = 200 A/ms
18
18
ns
Reverse Recovery Charge
Junction Capacitance
Thermal Resistance Junction
to Case
Qrr
CJ
RqJC
IF = 30 A, dIF/dt = 200 A/ms
VR = 10 V, IF = 0 A
100
100
nC
85
85
pF
1.2
1.2 °C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2



Part Number RHRG3060
Description Hyperfast Diode
Maker ON Semiconductor
Total Page 3 Pages
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RHRG3060 Datasheet PDF





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