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  ON Semiconductor Electronic Components Datasheet  

RHRG75120 Datasheet

Hyperfast Diode

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Hyperfast Diode
75 A, 1200 V
RHRG75120
Description
The RHRG75120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes and is
silicon nitride passivated ionimplanted epitaxial planar construction.
These devices are intended to be used as freewheeling / clamping
diodes and diodes in a variety of switching power supplies and other
power switching applications. Their low stored charge and hyperfast
soft recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transistors.
Features
Hyperfast Recovery, trr = 100 ns (@ IF = 75 A)
Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)
1200 V Reverse Voltage and High Reliability
Avalanche Energy Rated
This Device is PbFree and is RoHS Compliant
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
@ TC = 42°C
Repetitive Peak Surge Current
(Square Wave, 20 kHz)
VRRM
1200
V
VRWM
1200
V
VR
1200
V
IF(AV)
75
A
IFRM
150
A
NonRepetitive Peak Surge Current
(Halfwave, 1 Phase, 60 Hz)
IFSM
500
A
Maximum Power Dissipation
Avalanche Energy (See Figures 7 and 8)
Operating and Storage Temperature
PD
190
W
EAVL
50
mJ
TJ, TSTG 65 to
°C
+175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Parameter
Maximum Thermal Resistance, Junction
to Case
Symbol
RqJC
Value
0.8
Unit
°C/W
www.onsemi.com
CATHODE
(BOTTOM SIDE
METAL)
CATHODE
ANODE
TO2472LD
CASE 340CL
MARKING DIAGRAM
$Y&Z&3&K
RHRG75120
$Y
&Z
&3
&K
RHRG75120
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
K
A
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
February, 2020 Rev. 3
Publication Order Number:
RHRG75120/D


  ON Semiconductor Electronic Components Datasheet  

RHRG75120 Datasheet

Hyperfast Diode

No Preview Available !

RHRG75120
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
RHRG75120
RHRG75120
Package
TO2472L
Shipping
450 / Tube
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
VF
Instantaneous Forward Voltage
IF = 75 A
(Pulse Width = 300 ms, Duty Cycle = 2%)
IF = 75 A, TC = 150°C
IR
Instantaneous Reverse Current
VR = 1200 V
VR = 1200 V, TC = 150°C
Trr
Reverse Recovery Time (See Figure 6),
IF = 1 A, dIF/dt = 100 A/ms
Summation of ta + tb
IF = 75 A, dIF/dt = 100 A/ms
ta
Time to Reach Peak Reverse Current
(See Figure 6)
IF = 75 A, dIF/dt = 100 A/ms
3.2
V
2.6
250
mA
2
mA
85
ns
100
60
ns
tb
Time from Peak IRM to Projected Zero
IF = 75 A, dIF/dt = 100 A/ms
Crossing of IRM Based on a Straight Line
from Peak IRM through 25% of IRM
(See Figure 6)
25
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2



Part Number RHRG75120
Description Hyperfast Diode
Maker ON Semiconductor
Total Page 3 Pages
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RHRG75120 Datasheet PDF





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