900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

RHRP3060 Datasheet

Hyperfast Diode

No Preview Available !

RHRP3060
30 A, 600 V Hyperfast Diodes
Features
• Hyperfast Recovery trr = 45 ns (@ IF = 30 A)
• Max Forward Voltage, VF = 2.1 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Informations
Part Number
RHRP3060
Package
TO-220AC-2L
Brand
RHRP3060
Pin Assignments
Description
The RHRP3060 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction. These devices are intended to
be used as freewheeling clamping diodes and diodes in a
variety of switching power supplies and other power
switching applications. Their low stored charge and
hyperfast soft recovery minimize ringing and electrical noise
in many power switching circuits reducing power loss in the
switching transistors.
TO-220
Absolute Maximum Ratings
Symbol
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
PD
EAVL
TJ, TSTG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 120C)
Repetitive Peak Surge Current (Square Wave, 20KHz)
Nonrepetitive Peak Surge Current
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation
Avalanche Energy (See Figures 10 and 11)
Operating and Storage Temperature
©2005 Semiconductor Components Industries, LLC.
1
November-2017, Rev. 3
1. Cathode 2. Anode
RHRP3060
600
600
600
30
70
325
125
20
-65 to 175
Unit
V
V
V
A
A
A
W
mJ
C
Publication Order Number:
RHRP3060/D


  ON Semiconductor Electronic Components Datasheet  

RHRP3060 Datasheet

Hyperfast Diode

No Preview Available !

Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Test Conditions
Min.
RHRP3060
Typ.
Max.
VF
IR
trr
ta
tb
QRR
CJ
RJC
IF = 30 A
IF = 30 A, TC = 150C
VR = 400 V
VR = 600 V
VR = 400 V, TC = 150C
VR = 600 V, TC = 150C
IF = 1 A, dlF/dt = 200 A/s
IF = 30 A, dlF/dt = 200 A/s
IF = 30 A, dlF/dt = 200 A/s
IF = 30 A, dlF/dt = 200 A/s
IF = 30 A, dlF/dt = 200 A/s
VR = 600 V, IF = 0 A
-
-
2.1
-
-
1.7
-
-
-
-
-
250
-
-
-
-
-
1.0
-
-
40
-
-
45
-
22
-
-
18
-
-
100
-
-
85
-
-
-
1.2
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300s, D = 2%)
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RJC = Thermal resistance junction to case.
pw = pulse width.
D = Duty cycle.
Unit
V
V
A
A
mA
mA
ns
ns
ns
ns
nC
pF
C/W
www.onsemi.com
2



Part Number RHRP3060
Description Hyperfast Diode
Maker ON Semiconductor
Total Page 3 Pages
PDF Download

RHRP3060 Datasheet PDF





Similar Datasheet

1 RHRP3060 Hyperfast Diode
ON Semiconductor
2 RHRP3060 Ultrafast Rectifier
INCHANGE
3 RHRP3060 30A/ 400V - 600V Hyperfast Diodes
Fairchild Semiconductor
4 RHRP3060 30A/ 400V - 600V Hyperfast Diodes
Intersil Corporation





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy