Datasheet4U Logo Datasheet4U.com

RURG3060CC-F085 - Ultrafast Rectifier

Datasheet Summary

Description

The RURG3060

characteristics (trr < 80 ns).

It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.

Features

  • High Speed Switching (trr = 60 ns (Typ. ) @ IF = 30 A).
  • Low Forward Voltage (VF = 1.5 V (Max) @ IF = 30 A).
  • Avalanche Energy Rated.
  • AEC.
  • Q101Qualified and PPAP Capable.
  • This is a Pb.
  • Free Device.

📥 Download Datasheet

Datasheet preview – RURG3060CC-F085

Datasheet Details

Part number RURG3060CC-F085
Manufacturer ON Semiconductor
File Size 480.88 KB
Description Ultrafast Rectifier
Datasheet download datasheet RURG3060CC-F085 Datasheet
Additional preview pages of the RURG3060CC-F085 datasheet.

📁 Similar Datasheet

  • RURG3060CC - Ultrafast Dual Diode (Fairchild Semiconductor)
  • RURG3060CC - 30A/ 400V - 600V Ultrafast Dual Diodes (Intersil Corporation)
  • RURG3060CC - Ultrafast Rectifier (INCHANGE)
  • RURG3060CC_F085 - Ultrafast Rectifier (Fairchild Semiconductor)
  • RURG3060 - 30A GLASS PASSIVATED SUPERFAST RECTIFIER (WON-TOP)
  • RURG3060 - Ultrafast Diode (Fairchild Semiconductor)
  • RURG3060 - 30A/ 600V Ultrafast Diode (Intersil Corporation)
  • RURG3060_F085 - Ultrafast Rectifier (Fairchild Semiconductor)
  • RURG3010 - Ultrafast Diodes (HARRIS)
  • RURG30100 - 30A/ 1000V Ultrafast Diode (Intersil Corporation)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Ultrafast Rectifier 30 A, 600 V RURG3060CC-F085 Description The RURG3060−F085 is an dual ultrafast diode with soft recovery characteristics (trr < 80 ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Features • High Speed Switching (trr = 60 ns (Typ.) @ IF = 30 A) • Low Forward Voltage (VF = 1.
Published: |