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SB80W10T - Schottky Barrier Diode

Features

  • VF max=0.8V.
  • IR max=0.1mA.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Note).
  • 1. Indicates the total value.
  • 2. Value per element Symbol VRRM VRSM IO.
  • 1 IO.
  • 2 IFSM Tj Tstg Conditions 50Hz resistive load, sine wave Tc=62°C 50Hz resistive load, sine wave.

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Datasheet Details

Part number SB80W10T
Manufacturer onsemi
File Size 260.25 KB
Description Schottky Barrier Diode
Datasheet download datasheet SB80W10T Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1817A SB80W10T Schottky Barrier Diode 100V, 8A, Low IR, Monolithic Dual TP Common Cathode http://onsemi.com Features • VF max=0.8V • IR max=0.1mA • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Note) *1. Indicates the total value *2. Value per element Symbol VRRM VRSM IO*1 IO*2 IFSM Tj Tstg Conditions 50Hz resistive load, sine wave Tc=62°C 50Hz resistive load, sine wave Tc=121°C 50Hz sine wave, 1 cycle Ratings 100 105 8 4 40 --55 to +150 --55 to +150 Unit V V A A A °C °C Stresses exceeding Maximum Ratings may damage the device.
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