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  ON Semiconductor Electronic Components Datasheet  

SBAS40-06LT1G Datasheet

Common Anode Schottky Barrier Diodes

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BAS40-06LT1G,
SBAS40-06LT1G
Common Anode Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand held and portable
applications where space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
VR 40 V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating Junction and Storage
Temperature Range
Forward Continuous Current
Single Forward Current
tv1s
t v 10 ms
Thermal Resistance (Note 1)
Junction−to−Ambient (Note 2)
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
Symbol
Max
Unit
PF
225 mW
1.8 mW/°C
TJ, Tstg −55 to +150 °C
IFM
IFSM
RqJA
120 mA
mA
200
600
508 °C/W
311
www.onsemi.com
40 VOLTS
SCHOTTKY BARRIER DIODE
SOT−23 (TO−236)
CASE 318
STYLE 12
ANODE
3
CATHODE
1
2
CATHODE
MARKING DIAGRAM
L2 M G
G
L2 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BAS40−06LT1G
SBAS40−06LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1997
October, 2016 − Rev. 9
1
Publication Order Number:
BAS40−06LT1/D


  ON Semiconductor Electronic Components Datasheet  

SBAS40-06LT1G Datasheet

Common Anode Schottky Barrier Diodes

No Preview Available !

BAS40−06LT1G, SBAS40−06LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
40
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT pF
− 5.0
Reverse Leakage
(VR = 25 V)
IR mAdc
− 1.0
Forward Voltage
(IF = 1.0 mAdc)
VF mVdc
− 380
Forward Voltage
(IF = 10 mAdc)
VF mVdc
− 500
Forward Voltage
(IF = 40 mAdc)
VF Vdc
− 1.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
100 100
TA = 150°C
125°C
10
10 1.0 85°C
150°C
1.0 1 25°C
85°C
25°C
0.1
0
- 40°C - 55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.8
0.1
0.01 25°C
0.001
0
5.0 10 15 20
VR, REVERSE VOLTAGE (VOLTS)
25
Figure 2. Reverse Current versus Reverse
Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5.0 10 15 20 25 30 35
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
40
www.onsemi.com
2


Part Number SBAS40-06LT1G
Description Common Anode Schottky Barrier Diodes
Maker ON Semiconductor
Total Page 3 Pages
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