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  ON Semiconductor Electronic Components Datasheet  

SBAS40L Datasheet

Schottky Barrier Diodes

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BAS40L, SBAS40L
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating Junction and Storage
Temperature Range
Symbol
VR
PF
TJ, Tstg
Value
40
225
1.8
−55 to +150
Unit
V
mW
mW/°C
°C
Forward Continuous Current
Forward Surge Current
tv1s
t v 10 ms
Thermal Resistance (Note 1)
Junction−to−Ambient (Note 2)
IF
IFSM
RqJA
120 mA
mA
200
600
508 °C/W
311
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
www.onsemi.com
40 VOLTS
SCHOTTKY BARRIER DIODES
SOT−23 (TO−236)
CASE 318
STYLE 8
3
CATHODE
1
ANODE
MARKING DIAGRAM
B1 M G
G
B1 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BAS40LT1G,
SBAS40LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BAS40LT3G,
SBAS40LT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1997
March, 2018 − Rev. 12
1
Publication Order Number:
BAS40LT1/D


  ON Semiconductor Electronic Components Datasheet  

SBAS40L Datasheet

Schottky Barrier Diodes

No Preview Available !

BAS40L, SBAS40L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
V
40 −
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT pF
− 5.0
Reverse Leakage
(VR = 25 V)
IR mAdc
− 1.0
Forward Voltage
(IF = 1.0 mAdc)
VF mVdc
− 380
Forward Voltage
(IF = 10 mAdc)
VF mVdc
− 500
Forward Voltage
(IF = 40 mAdc)
VF Vdc
− 1.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
100 100
TA = 150°C
125°C
10
10 1.0 85°C
150°C
1.0 1 25°C
85°C
25°C
- 40°C - 55°C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.8
3.5
0.1
0.01 25°C
0.001
0
5.0 10 15 20
VR, REVERSE VOLTAGE (VOLTS)
25
Figure 2. Reverse Current versus Reverse
Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5.0 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
35
40
www.onsemi.com
2


Part Number SBAS40L
Description Schottky Barrier Diodes
Maker ON Semiconductor
Total Page 5 Pages
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