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SBRA8160NT3G - Schottky Power Rectifier

Download the SBRA8160NT3G datasheet PDF. This datasheet also covers the SBRA8160T3G variant, as both devices belong to the same schottky power rectifier family and are provided as variant models within a single manufacturer datasheet.

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SBRA8160T3G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package SS16T3G, SBRA8160T3G, SBRA8160NT3G These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
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