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SBRD81045T4G - Schottky Power Rectifier

Download the SBRD81045T4G datasheet PDF. This datasheet also covers the SBRB1045G variant, as both devices belong to the same schottky power rectifier family and are provided as variant models within a single manufacturer datasheet.

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. Features.
  • Guardring for Stress Protection.
  • Low Forward Voltage.
  • 175 C Operating Junction Temperature.
  • Epoxy Meets UL 94 V.
  • 0 @ 0.125 in.
  • Short Heat Sink Tab Manufactured-Not Sheared!.
  • SBRB and SBRD8 Prefixes for Automotive and Other.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SBRB1045G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com Switch-mode Schottky Power Rectifier Surface Mount Power Package MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. Features  Guardring for Stress Protection  Low Forward Voltage  175 C Operating Junction Temperature  Epoxy Meets UL 94 V−0 @ 0.
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