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SFT1342 - Power MOSFET

Key Features

  • Low On-Resistance.
  • Low Gate Charge.
  • Pb-free and RoHS Compliance.
  • High Speed Switching.
  • ESD Diode-Protected Gate Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current PW≤10μs, duty cycle≤1% ID IDP Power Dissipation Junction Temperature Storage Temperature Tc=25°C PD Tj Tstg Thermal Resistance Ratings Parameter Junction to Case Stead.

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Datasheet Details

Part number SFT1342
Manufacturer onsemi
File Size 356.48 KB
Description Power MOSFET
Datasheet download datasheet SFT1342 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1559B SFT1342 Power MOSFET –60V, 62mΩ, –12A, Single P-Channel Features • Low On-Resistance • Low Gate Charge • Pb-free and RoHS Compliance • High Speed Switching • ESD Diode-Protected Gate Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current PW≤10μs, duty cycle≤1% ID IDP Power Dissipation Junction Temperature Storage Temperature Tc=25°C PD Tj Tstg Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient *1 Note : *1 Insertion mounted Symbol RθJC RθJA Value –60 ±20 –12 –48 1.0 15 150 −55 to +150 Unit V V A A W W °C °C Value 8.33 125 Unit °C/W http://onsemi.